The implantation of ions is a key technology in the doping of Si wafers, in the manufacture of components in microelectronics and thin film transistors. Because of the high temperatures (up to 2.000°C) and harsh chemical environments occurring in this process, component parts of the ionization chamber must be made from molybdenum, tungsten or graphite.

PLANSEE products for ion implantation

PLANSEE’s product range for ion implantation systems includes various machined and formed parts made of molybdenum, TZM, tungsten, WL, tantalum, graphite, ceramic and steel:

Ion source parts
Arc chamber parts | Cathodes | Filaments | Repellers | Arc
slits | Cathode and filament holders | Gas pipes | Insulators |
etc.

Electrode parts
Ground electrodes | Suppression electrodes
Plasma/electron flood gun parts
Filaments | Filament holders | Insulators | etc.

Beam line
Beam shields | Analyzer parts | etc.